APM2321 Datasheet, PDF (3/9 Pages) Anpec Electronics Coropration – P-Channel Enhancement Mode MOSFET

APM2321
Typical Characteristics
Output Characteristics
5
-VGS=4,5,6,7,8,9,10V
4
-VGS=3V
3
2
1
-VGS=2V
0
0
1
2
3
4
5
-VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
3.6
3.0
2.4
1.8
TJ=125°C
1.2
0.6
TJ=25°C
TJ=-55°C
0.0
0.0
0.5
1.0
1.5
2.0
2.5
-VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.6
-IDS=250µA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
On-Resistance vs. Drain Current
1.0
0.8
0.6
-VGS=2.5V
-VGS=4.5V
0.4
0.2
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
-ID - Drain Current (A)
Copyright  ANPEC Electronics Corp.
3
Rev. A.1 - Jun., 2003
www.anpec.com.tw