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| APM9953 Datasheet, PDF (2/9 Pages) Anpec Electronics Coropration – P-Channel Enhancement Mode MOSFET | |||
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APM9953
Absolute Maximum Ratings Cont. (TA = 25°C unless otherwise noted)
Symbol
PD
TJ
TSTG
RθJA*
Parameter
Maximum Power Dissipation TA=25°C
TA=100°C
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance  Junction to Ambient
Rating
2.5
1.0
150
-55 to 150
62.5
Unit
W
°C
°C
°C/W
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Static
BVDSS
Drain-Source Breakdown
Voltage
VGS=0V , IDS=-250µA
IDSS
VGS(th)
IGSS
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
VDS=-16V , VGS=0V
VDS=VGS , IDS=-250µA
VGS=±8V , VDS=0V
RDS(ON)=
Drain-Source On-state
Resistance
VGS=-10V , IDS=-3A
VGS=-4.5V , IDS=-2A
VSD= Diode Forward Voltage
Dynamic>
ISD=-0.5A , VGS=0V
Qg Total Gate Charge
VDS=-10V , IDS=-3A
Qgs
Qgd
td(ON)
Tr
td(OFF)
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
VGS=-4.5V
VDD=-10V , IDS=-3A ,
VGEN=-4.5V , RG=6â¦
Tf Turn-off Fall Time
Ciss Input Capacitance
VGS=0V
Coss Output Capacitance
VDS=-15V
Crss Reverse Transfer Capacitance Frequency=1.0MHz
Notes
a : Pulse test ; pulse width â¤300µs, duty cycle ⤠2%
b : Guaranteed by design, not subject to production testing
APM9953
Unit
Min. Typ. Max.
-20
V
-1
µA
-0.5 -0.7 -1
V
±100 nA
76 100
mâ¦
93 125
-0.7 -1.3
V
5.3 6.9
1.04
nC
0.62
13 21.5
36
56
ns
45 69.5
37 57.5
552
118
pF
76
Copyright  ANPEC Electronics Corp.
2
Rev. A.1 - July., 2003
www.anpec.com.tw
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