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| APM7313K Datasheet, PDF (2/10 Pages) Anpec Electronics Coropration – Dual N-Channel Enhancement Mode MOSFET | |||
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APM7313K
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
VDSS
VGSS
ID*
IDM*
IS*
TJ
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
300µs Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
PD*
Maximum Power Dissipation
RθJA* Thermal Resistance-Junction to Ambient
Note:
*Surface Mounted on 1in2 pad area, t ⤠10sec.
VGS=10V
TA=25°C
TA=100°C
Rating
30
± 20
6
24
3
150
-55 to 150
2
0.8
62.5
Electrical Characteristics (TA = 25°C unless otherwise noted)
Unit
V
A
A
°C
W
°C/W
Symbol
Parameter
Test Condition
APM7313K
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
30
IDSS Zero Gate Voltage Drain Current VDS=20V, VGS=0V
T A=25°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=250µA
1
IGSS Gate Leakage Current
VGS=±20V, VDS=0V
RDS(ON) a
VSD a
Drain-Source On-state Resistance
Diode Forward Voltage
VGS=10V, IDS=6A
VGS=4.5V, IDS=2A
ISD=2A, VGS=0V
Gate Charge Characteristics b
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=15V, VGS=10V,
IDS=6A
V
1
µA
30
1.5 2
V
±100 nA
21 28
mâ¦
27 42
0.7 1.3 V
19 25
1.6
nC
3.6
C opyright © ANPEC Electronics C orp.
2
Rev. B.3 - Nov., 2005
www.anpec.com.tw
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