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| APM4220KA Datasheet, PDF (2/11 Pages) Anpec Electronics Coropration – N-Channel Enhancement Mode MOSFET | |||
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APM4220KA
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
Mounted on Large Heat Sink
25
V
±20
150
°C
-55 to 150
°C
PD
Maximum Power Dissipation
TC=25°C
TC=100°C
RθJC
Thermal Resistance-Junction to Case
Mounted on PCB of 1in2 Pad Areaj
IDP
300ìs Pulse Drain Current Tested
TA=25°C
TA=100°C
ID
Continuous Drain Current
TA=25°C
TA=100°C
PD
Maximum Power Dissipation
TA=25°C
TA=100°C
RθJA
Thermal Resistance-Junction to Ambient
Mounted on PCB of Minimum Footprintk
IDP
300ìs Pulse Drain Current Tested
TA=25°C
TA=100°C
ID
Continuous Drain Current
TA=25°C
TA=100°C
PD
Maximum Power Dissipation
TA=25°C
TA=100°C
RθJA
Thermal Resistance-Junction to Minimum Footprint
50
W
20
2.5
°C/W
50
A
25
16
A
8
3
W
1.2
40
°C/W
50
A
25
13
A
6
2.5
W
1
50
°C/W
Notes:
j.The value of RθJA is when the device mounted on
1in2 pad with 2oz. Copper, t ⤠10s.
k. The value of RθJA is when the device mounted on
minimum pad with 2oz. Copper, t ⤠10s.
Copyright  ANPEC Electronics Corp.
2
Rev. B.1 - Apr., 2005
www.anpec.com.tw
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