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| APM3095PU Datasheet, PDF (2/10 Pages) Anpec Electronics Coropration – P-Channel Enhancement Mode MOSFET | |||
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APM3095PU
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA = 25°C)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
IS
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP
300µs Pulse Drain Current Tested
TC=25°C
TC=100°C
ID
Continuous Drain Current
TC=25°C
TC=100°C
PD
Maximum Power Dissipation
TC=25°C
TC=100°C
RθJC
Thermal Resistance-Junction to Case
Mounted on PCB of 1in2 Pad Area
IDP
300µs Pulse Drain Current Tested
TA=25°C
TA=100°C
ID
Continuous Drain Current
TA=25°C
TA=100°C
PD
Maximum Power Dissipation
TA=25°C
TA=100°C
RθJA
Thermal Resistance-Junction to Ambient
Mounted on PCB of Minimum Footprint
IDP
300µs Pulse Drain Current Tested
TA=25°C
TA=100°C
ID
Continuous Drain Current
TA=25°C
TA=100°C
PD
Maximum Power Dissipation
TA=25°C
TA=100°C
RθJA
Thermal Resistance-Junction to Ambient
Rating
-30
±25
150
-55 to 150
-2.5
-20
-10
-8
-4
50
20
2.5
-20
-10
-4
-2
2.5
1
50
-20
-10
-3
-2
1.6
0.6
75
Unit
V
°C
°C
A
A
A
W
°C/W
A
A
W
°C/W
A
A
W
°C/W
Copyright © ANPEC Electronics Corp.
2
Rev. B.2 - Oct., 2005
www.anpec.com.tw
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