APM2305 Datasheet, PDF (2/9 Pages) Anpec Electronics Coropration – P-Channel Enhancement Mode MOSFET

APM2305
Absolute Maximum Ratings (Cont.) (T_A = 25°C unless otherwise noted)
Symbol
P_D
T_J
T_STG
R_θjA
Parameter
Maximum Power Dissipation T_A=25_°C
T_A=100°C
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance – Junction to Ambient
Rating
1.25
0.5
150
-55 to 150
100
Unit
W
°C
°C
°C/W
Electrical Characteristics (T_A = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Static
BV_DSS
Drain-Source Breakdown
Voltage
V_GS=0V , I_DS=-250µA
I_DSS
V_GS(th)
I_GSS
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
Ra
DS(ON)
Resistance
V_DS=-6.5V , V_GS=0V
V_DS=V_GS , I_DS=-250µA
V_GS=±8V , V_DS=0V
V_GS=-4.5V , I_DS=-3.5A
V_GS=-2.5V , I_DS=-3A
V_GS=-1.8V , I_DS=-2A
V_SD^a Diode Forward Voltage
Dynamic^b
I_SD=-1.25A , V_GS=0V
Q_g
Q_gs
Q_gd
t_d(ON)
T_r
t_d(OFF)
T_f
C_iss
C_oss
C_rss
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V_DS=-5V , I_DS=-1A
V_GS=-4.5V
Turn-on Delay Time
Turn-on Rise Time
V_DD=-10V , I_DS=-1A ,
Turn-off Delay Time
Turn-off Fall Time
V_GEN=-4.5V , R_G=6Ω
Input Capacitance
V_GS=0V
Output Capacitance
V_DS=-15V
Reverse Transfer Capacitance _{Frequency=1.0MHz}
Notes
a _{: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%}
b _{: Guaranteed by design, not subject to production testing}
APM2305
Min. Typ. Max.
Unit
-16
V
-1
µA
-0.5 -0.7 -1
V
±100 ^nA
60
70
70
85
mΩ
83 105
-0.7 -1.3
V
12.7 15
1.75
nC
2.8
12
21
25
42
ns
52
85
18
32
1290
300
pF
210
Copyright  ANPEC Electronics Corp.
2
Rev. A.1 - Jan., 2003
www.anpec.com.tw