 English |
|
|
|
|
|
|
|
| APM2030NV Datasheet, PDF (2/11 Pages) Anpec Electronics Coropration – N-Channel Enhancement Mode MOSFET | |||
| |||
| ◁ |
APM2030NV
Absolute
Maximum
Ratings
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
VDSS
VGSS
ID*
IDM*
IS*
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Diode Continuous Forward Current
VGS=4.5V
TJ
TSTG
Maximum Junction Temperature
Storage Temperature Range
PD*
Power Dissipation for Single Operation
RθJA* Thermal Resistance-Junction to Ambient
Note:
*Surface Mounted on 1in2 pad area, t ⤠10sec.
TA=25°C
TA=100°C
Rating
20
±12
6
24
2.3
150
-55 to 150
1.47
0.58
85
Unit
V
A
A
°C
W
°C/W
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
APM2030NV
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
20
IDSS Zero Gate Voltage Drain Current VDS=16V, VGS=0V
TJ=85°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=250µA
0.5
IGSS Gate Leakage Current
VGS=±12V, VDS=0V
RDS(ON) a Drain-Source On-state Resistance
VSDa Diode Forward Voltage
VGS=4.5V, IDS=6A
VGS=2.5V, IDS=2A
ISD=1.5A, VGS=0V
Gate Charge Characteristics b
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=10V, VGS=4.5V,
IDS=6A
V
1
µA
30
0.7 1
V
±100 nA
28 32
mâ¦
38 45
0.7 1.3 V
9
11
3.6
nC
1
Copyright  ANPEC Electronics Corp.
2
Rev. B.1 - Mar., 2005
www.anpec.com.tw
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese