APM4800 Datasheet, PDF (1/9 Pages) Anpec Electronics Coropration – N-Channel Enhancement Mode MOSFET

APM4800
N-Channel Enhancement Mode MOSFET
Features
Pin Description
•
30V/8A
,
R_DS(ON)=15mΩ(typ.)
@
V =10V
GS
R_DS(ON)=22mΩ(typ.) @ V_GS=4.5V
• Super High Dense Cell Design for Extremely
Low R
DS(ON)
• Reliable and Rugged
• SO-8 Package
SO-8
S
1
S
2
S
3
G
4
8
D
7
D
6
D
5
D
Top View
Applications
D
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
G
Systems.
Ordering and Marking Information
S
N-Channel MOSFET
APM 4800
H a n d lin g C o d e
Temp. Range
Package Code
Package Code
K : SO -8
O perating Junction Tem p. R ange
C : -55 to 150°C
H andling C ode
TU : Tube
TR : Tape & Reel
APM4800 K :
APM 4800
XXXXX
XXX XX - D ate Code
Absolute Maximum Ratings (T_A = 25°C unless otherwise noted)
Symbol
Parameter
V_DSS
V_GSS
I_D*
I_DM
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
* Surface Mounted on FR4 Board, t ≤ 10 sec.
Rating
Unit
30
V
±20
8
A
32
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
1
Rev. A.1 - Jan., 2002
www.anpec.com.tw