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APM4416 Datasheet, PDF (1/9 Pages) Anpec Electronics Coropration – N-Channel Enhancement Mode MOSFET
APM4416
N-Channel Enhancement Mode MOSFET
Features
Pin Description
•
30V/8A
,
RDS(ON)=15mΩ(typ.)
@
V =10V
GS
RDS(ON)=22mΩ(typ.) @ VGS=4.5V
• Super High Dense Cell Design for Extremely
Low R
DS(ON)
• Reliable and Rugged
• SO-8 Package
SO-8
S
1
S
2
S
3
G
4
8
D
7
D
6
D
5
D
Top View
Applications
D
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
G
S
N-Channel MOSFET
APM4416
APM4416 K :
H andling C ode
Temp. Range
Package Code
A P M 4416
XXXXX
Package Code
K : SO -8
O perating Junction Tem p. R ange
C : -55 to 150°C
H andling C ode
TU : Tube
TR : Tape & Reel
XXXXX - Date Code
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Rating
Unit
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
30
V
±20
ID*
Maximum Drain Current – Continuous
IDM
Maximum Drain Current – Pulsed
8
A
32
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
1
Rev. A.1 - Jan., 2002
www.anpec.com.tw