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APM4410 Datasheet, PDF (1/9 Pages) Anpec Electronics Coropration – N-Channel Enhancement Mode MOSFET
APM4410
N-Channel Enhancement Mode MOSFET
Features
Pin Description
• 30V/11.5A, RDS(ON) = 9mΩ(typ.) @ VGS = 10V
RDS(ON) =14.5mΩ(typ.) @ VGS = 4.5V
• High Density Cell Design
• Reliable and Rugged
• SO-8 Package
Applications
S
1
S
2
S
3
G
4
8
D
7
D
6
D
5
D
SO − 8
D
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered
G
Systems
Ordering and Marking Information
S
N-Channel MOSFET
APM 4410
H a n d lin g C o d e
Temp. Range
Package Code
Package Code
K : SO -8
O perating Junction Tem p. R ange
C : -55 to 125°C
H andling C ode
TU : Tube
TR : Tape & Reel
APM4410 K :
APM 4410
XXXXX
XXX XX - D ate Code
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
VDSS
VGSS
ID
IDM
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
Maximum Power Dissipation
TA=25°C
TA=100°C
Rating
30
±20
11.5
50
2.5
1.0
Unit
V
A
W
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
1
Rev. A.5 - July., 2002
www.anpec.com.tw