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APM3095P Datasheet, PDF (1/9 Pages) Anpec Electronics Coropration – P-Channel Enhancement Mode MOSFET
APM3095P
P-Channel Enhancement Mode MOSFET
Features
Pin Description
•
-30V/-6A
,
RDS(ON)=95mΩ(typ.)
@
V =-10V
GS
RDS(ON)=140mΩ(typ.)
@
V =-4.5V
GS
• Super High Dense Cell Design for Extremely
Low RDS(ON)
• Reliable and Rugged
• TO-252 Package
Applications
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
GD S
Top View of TO-252
S
G
DD
P-Channel MOSFET
APM 3095P
APM3095P U :
H andling C ode
Temp. Range
Package Code
A P M 3095P
XXXXX
Package Code
U : TO -252
O perating Junction T em p. R ange
C : -55 to 150°C
H andling C ode
TU : Tube
TR : Tape & Reel
XXXX X - Date C ode
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Rating
Unit
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
-30
V
±25
ID*
Maximum Drain Current – Continuous
IDM
Maximum Drain Current – Pulsed
-12
A
-30
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
1
Rev. A.1 - Oct., 2002
www.anpec.com.tw