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APM3023N Datasheet, PDF (1/12 Pages) Anpec Electronics Coropration – N-Channel Enhancement Mode MOSFET
APM3023N
N-Channel Enhancement Mode MOSFET
Features
• 30V/30A, RDS(ON)=15mΩ(typ.) @ VGS=10V
RDS(ON)=22mΩ(typ.) @ VGS=5V
• Super High Dense Cell Design
• High Power and Current Handling Capability
• TO-252.TO-220 and SOT-223 Packages
Pin Description
1
2
3
GD S
Top View of TO-252
1
2
3
G DS
Top View of SOT-223
Applications
3
S
• Switching Regulators
• Switching Converters
2
D
1
G
TO-220 Package
Ordering and Marking Information
APM3023N
APM3023N U/F:
:
APM3023N V :
H andling C ode
Temp. Range
Package Code
APM3023N
XXXXX
APM3023N
XXXXX
Package Code
U : TO -252
V : SO T-223
O perating Junction Tem p. Range
C : -55 to 150° C
H andling C ode
TR : Tape & Reel
F : TO -220
XXXXX - D ate Code
XXXXX - D ate C ode
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Rating
Unit
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
30
V
±20
ID*
Maximum Drain Current – Continuous
IDM
Maximum Drain Current – Pulsed
30
A
70
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
1
Rev. A.6 - July., 2003
www.anpec.com.tw