APM3009N Datasheet, PDF (1/12 Pages) Anpec Electronics Coropration – N-Channel Enhancement Mode MOSFET

APM3009N
N-Channel Enhancement Mode MOSFET
Features
Pin Description
• 30V/70A , R_DS(ON)=7mΩ(typ.) @ V_GS=10V
R_DS(ON)=11mΩ(typ.) @ V_GS=4.5V
• Super High Dense Advanced Cell Design for
Extremely Low R_DS(ON)
• Reliable and Rugged
• TO-220 , TO-252 and TO-263 Packages
Applications
• Power Management in Desktop Computer or
DC/DC Converters.
1
2
3
GDS
Top View of TO-220, TO-252 and TO-263
Ordering and Marking Information
APM3009N
H andling C ode
Temp. Range
Package Code
A P M 3009N F/G /U :
APM 3009N
XXXXX
Package Code
F : TO -220 G : TO -263 U : TO -252
O perating Junction T em p. R ange
C : -55 to 125 ° C
H andling C ode
TU : Tube
TR : Tape & Reel
XXXXX - Date Code
Absolute Maximum Ratings (T_A = 25°C unless otherwise noted)
Symbol
Parameter
Rating
Unit
V_DSS
V_GSS
Drain-Source Voltage
Gate-Source Voltage
30
±20
V
I_D*
Maximum Drain Current – Continuous
I_DM
Maximum Drain Current – Pulsed
60
110
A
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
1
Rev. A.3 - May., 2002
www.anpec.com.tw