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APM3005N Datasheet, PDF (1/12 Pages) Anpec Electronics Coropration – N-Channel Enhancement Mode MOSFET
APM3005N
N-Channel Enhancement Mode MOSFET
Features
Pin Description
• 30V / 80A , RDS(ON)= 4mΩ(typ.) @ VGS= 10V
RDS(ON)= 7mΩ(typ.) @ VGS= 4.5V
• Super High Dense Advanced Cell Design for
Extremely Low RDS(ON)
• Reliable and Rugged
• TO-220, TO-252 and TO-263 Packages
Applications
• Power Management in Desktop Computer or
DC/DC Converters.
1
2
3
GDS
Top View of TO-220, TO-252 and TO-263
D
G
Ordering and Marking Information
S
N-Channel MOSFET
APM3005N
H andling C ode
Temp. Range
Package Code
Package Code
F : TO -220 U : TO -252 G : TO -263
O perating Junction T em p. R ange
C : -55 to 125 ° C
H andling C ode
TU : Tube
TR : Tape & Reel
APM 3005N :
APM 3005N
XXXXX
XXXXX - Date Code
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
VDSS
VGSS
ID*
IDM
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
Rating
Unit
30
V
±20
80
A
160
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
1
Rev. A.3 - Jan., 2003
www.anpec.com.tw