AMD540CE Datasheet, PDF (4/7 Pages) Analog Power – P & N-Channel 40-V (D-S) MOSFET

Analog Power
AMD540CE
Typical Electrical Characteristics (N-Channel)
100
10
1
0.1
0.01
TA = 125^oC
25^oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
4.7
4.5
4.3
4.1
3.9
3.7
3.5
3.3
3.1
2.9
2.7
-50
-25
0
ID = 250µA
25
50
75
TJ - Temperature (^oC)
100
125
150
Threshold Voltage
0.05
0.045
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage(V)
On-Resistance vs. Gate-to-Source Voltage
50
SINGLE PULSE
RqJA = 125oC/W
40
TA = 25oC
30
20
10
0
0.001 0.01
0.1
1
10
100
t1, TIME (SEC)
Figure 10. Single Pulse Maximum Power Dissipation
1
D = 0.5
0.2
0.1
0.1
0.0
0.02
0.01
0.01
Normalized Thermal Transient Junction to Ambient
RqJ_A(t) = r(t) + RqJA
RqJA = 125^oC/W
P(p k)
t1
t2
S INGLE P ULS E
0.001
0.0001
0.001
T_J - T_A = P * Rq J _A(t)
Duty Cycle, D = t1 / t2
0.01
0.1
1
t1, TIM E (s e c )
10
100
1000
Figure 11. Transient Thermal Response Curve
PRELIMINARY
4
Publication Order Number:
DS-AMD540CE_F