AMD530C Datasheet, PDF (2/3 Pages) Analog Power – P & N-Channel 30-V (D-S) MOSFET

Analog Power
AMD530C
SPECIFICATIONS (T_A = 25^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Test Conditions
Limits
Ch Min Typ
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^A
Drain-Source On-Resistance^A
Forward Tranconductance^A
Dynamic
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
VGS = VDS, ID = 250 uA
VGS = VDS, ID = -250 uA
VGS = -12 V, VDS = 0 V
V_GS = 12 V, V_DS = 0 V
VDS = -24 V, VGS = 0 V
V_DS = 24 V, V_GS = 0 V
V_DS = 5 V, V_GS = 4.5 V
V_DS = -5 V, V_GS = -4.5 V
VGS = 4.5 V, ID = 6.9 A
VGS = 2.5 V, ID = 6 A
VGS = -4.5 V, ID = -5.2 A
VGS = -2.5 V, ID = -4.2 A
V_DS = 15 V, I_D = 6.9 A
V_DS = -15 V, I_D = -5.2 A
N 0.6
P -0.6
P
N
P
N
N 20
P -20
N
P
N
25
P
10
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
N
6.0
Qg
N-Channel
P
25
Qgs
V_DS=15V, V_GS=4.5V, I_D=6.9A
N
P -Chan n el
P
1.0
2.4
Qgd
VDS=-15V, VGS=-4.5V, ID=-5.2A
N
P
1.5
3.9
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
td(on)
N-Chaneel
N
7.4
P
7.6
V_DD=15V, VGS=4.5V, ID=1A ,
N
4
tr
R_{GE N}=6Ω,
P
6.8
P -Chan n el
N
22.2
td(off)
VDD=-15V, VGS=-4.5V, ID=-1A
P
33.6
tf
RGEN=6Ω
N
3.6
P
23.2
Max ^Unit
V
±100
±100 ^nA
-1
1
uA
A
35
45
52 ^mΩ
70
S
nC
nS
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
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PRELIMINARY
2
Publication Order Number:
DS-AMD530_F