AMA960N Datasheet, PDF (2/5 Pages) Analog Power – Dual N-Channel 60-V (D-S) MOSFET

Analog Power
AMA960N
Electrical Characteristics
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static
Gate-Source Threshold Voltage V_GS(th)
V_DS = V_GS, I_D = 250 uA
1
V
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = ±20 V
±10 uA
Zero Gate Voltage Drain Current
I_DSS
V_DS = 48 V, V_GS = 0 V
V_DS = 48 V, V_GS = 0 V, T_J = 55°C
1
uA
25
On-State Drain Current ^a
I_D(on)
V_DS = 5 V, V_GS = 10 V
3
A
Drain-Source On-Resistance ^a
r_DS(on)
V_GS = 10 V, I_D = 1.5 A
V_GS = 4.5 V, I_D = 1.2 A
260 _mΩ
330
Forward Transconductance ^a
g_fs
V_DS = 15 V, I_D = 1.5 A
10
S
Diode Forward Voltage ^a
V_SD
I_S = 0.9 A, V_GS = 0 V
0.84
V
Dynamic ^b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q_g
Q_gs
Q_gd
V_DS = 30 V, V_GS = 4.5 V,
I_D = 1.5 A
1.7
0.5
nC
1.0
Turn-On Delay Time
t_d(on)
3
Rise Time
Turn-Off Delay Time
t_r
V_DS = 30 V, R_L = 20 Ω, I_D = 1.5 A,
4
t_d(off)
V_GEN = 10 V, R_GEN = 6 Ω
12
ns
Fall Time
t_f
3
Input Capacitance
C_iss
97
Output Capacitance
C_oss
V_DS = 15 V, V_GS = 0 V, f = 1 Mhz
11
pF
Reverse Transfer Capacitance
C_rss
7
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
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2
Publication Order Number:
DS_AMA960N_1A