AMA520C Datasheet, PDF (2/7 Pages) Analog Power – N & P-Channel 20-V (D-S) MOSFET

Analog Power
AMA520C
Electrical Characteristics
Parameter
Symbol
Test Conditions
Min
Static
Gate-Source Threshold Voltage V_GS(th)
V_DS = V_GS, I_D = 250 uA (N-ch)
V_DS = V_GS, I_D = -250 uA (P-ch)
0.3
-0.3
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = ±8 V
Zero Gate Voltage Drain Current I_DSS
V_DS = 16 V, V_GS = 0 V (N-ch)
V_DS = -16 V, V_GS = 0 V (P-ch)
On-State Drain Current
I_D(on)
V_DS = 5 V, V_GS = 4.5 V (N-ch)
V_DS = -5 V, V_GS = -4.5 V (P-ch)
10
-10
V_GS = 4.5 V, I_D = 3.6 A (N-ch)
Drain-Source On-Resistance
r_DS(on)
V_GS = 2.5 V, I_D = 3.4 A (N-ch)
V_GS = -4.5 V, I_D = -3.6 A (P-ch)
V_GS = -2.5 V, I_D = -3.4 A (P-ch)
Forward Transconductance
g_fs
V_DS = 10 V, I_D = 3.6 A (N-ch)
V_DS = -10 V, I_D = -3.6 A (P-ch)
Diode Forward Voltage
V_SD
I_S = 1.3 A, V_GS = 0 V
I_S = -1.3 A, V_GS = 0 V
(N-ch)
(P-ch)
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q_g
Q_gs
Q_gd
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_iss
C_oss
C_rss
N - Channel
V_DS = 10 V, V_GS = 4.5 V, I_D = 3.6 A
P - Channel
V_DS = -10 V, V_GS = 4.5 V, I_D = -3.6 A
N - Channel
V_DD = 10 V, R_L = 2.8 Ω, I_D = 3.6 A,
V_GEN = 4.5 V, R_GEN = 6 Ω
P - Channel
V_DD = -10 V, R_L = 2.8 Ω, I_D = -3.6 A,
V_GEN = -4.5 V, R_GEN = 6 Ω
N - Channel
V_DS = 15 V, V_GS = 0 V, f = 1 MHz
P - Channel
V_DS = -15 V, V_GS = 0 V, f = 1 MHz
Typ Max
±100
1
-1
58
82
112
172
10
5
0.7
-0.83
4
1.0
1.1
6
2.0
0.8
10
8
27
6
10
9
24
28
471
51
39
449
39
34
Unit
V
V
nA
uA
A
A
mΩ
mΩ
S
S
V
V
nC
nC
ns
ns
pF
pF
© Preliminary
2
Publication Order Number:
DS_AMA520C_1B