AM1590CE Datasheet, PDF (2/7 Pages) Analog Power – N & P-Channel 100-V (D-S) MOSFET

Analog Power
AM1590CE
Electrical Characteristics
Parameter
Symbol
Test Conditions
Min
Static
Gate-Source Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = 250 uA (N-ch)
V_DS = V_GS, I_D = -250 uA (P-ch)
1
-1
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = ±20 V
Zero Gate Voltage Drain Current
I_DSS
V_DS = 80 V, V_GS = 0 V
V_DS = -80 V, V_GS = 0 V
(N-ch)
(P-ch)
On-State Drain Current ^a
I_D(on)
V_DS = 5 V, V_GS = 10 V (N-ch)
V_DS = -5 V, V_GS = -10 V (P-ch)
0.7
-0.3
V_GS = 10 V, I_D = 0.3 A (N-ch)
Drain-Source On-Resistance ^a
r_DS(on)
V_GS = 4.5 V, I_D = 0.24 A (N-ch)
V_GS = -10 V, I_D = -0.15 A (P-ch)
V_GS = -4.5 V, I_D = -0.12 A (P-ch)
Forward Transconductance ^a
g_fs
V_DS = 15 V, I_D = 0.3 A (N-ch)
V_DS = -15 V, I_D = -0.15 A (P-ch)
Diode Forward Voltage ^a
V_SD
I_S = 0.18 A, V_GS = 0 V (N-ch)
I_S = -0.17 A, V_GS = 0 V (P-ch)
Dynamic ^b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
N - Channel
V_DS = 50 V, V_GS = 4.5 V, I_D = 0.3 A
N - Channel
V_DS = 50 V, R_L = 166.7 Ω,
I_D = 0.3 A,
V_GEN = 10 V, R_GEN = 6 Ω
N - Channel
V_DS = 15 V, V_GS = 0 V, f = 1 Mhz
P - Channel
V_DS = -50 V, V_GS = -4.5 V, I_D = -0.15
A
P - Channel
V_DS = -50 V, R_L = 333.4 Ω,
I_D = -0.15 A,
V_GEN = -10 V, R_GEN = 6 Ω
P - Channel
V_DS = -15 V, V_GS = 0 V, f = 1 Mhz
Typ
11
10
0.75
-0.82
1.2
0.2
0.8
3
4
13
5
62
19
9
1.2
0.4
0.5
5
5
10
5
84
18
9
Max
±10
1
-1
1.2
1.5
5.5
6
Unit
V
V
uA
uA
A
A
Ω
Ω
S
S
V
V
nC
ns
pF
nC
ns
pF
© Preliminary
2
Publication Order Number:
DS_AM1590CE_1A