AM14N25-280D Datasheet, PDF (2/5 Pages) Analog Power – N-Channel 250-V (D-S) MOSFET

Analog Power
AM14N25-280D
Electrical Characteristics
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static
Gate-Source Threshold Voltage V_GS(th)
V_DS = V_GS, I_D = 250 uA
1
V
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = ±20 V
±100 nA
Zero Gate Voltage Drain Current
I_DSS
V_DS = 200 V, V_GS = 0 V
V_DS = 200 V, V_GS = 0 V, T_J = 55°C
1
uA
25
On-State Drain Current ^a
I_D(on)
V_DS = 5 V, V_GS = 10 V
14
A
Drain-Source On-Resistance ^a
r_DS(on)
V_GS = 10 V, I_D = 3 A
V_GS = 5.5 V, I_D = 2.4 A
280 _mΩ
340
Forward Transconductance ^a
g_fs
V_DS = 15 V, I_D = 3 A
4
S
Diode Forward Voltage ^a
V_SD
I_S = 23.1 A, V_GS = 0 V
0.95
V
Dynamic ^b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q_g
Q_gs
Q_gd
V_DS = 120 V, V_GS = 5.5 V,
I_D = 3 A
16
7.1
nC
6.8
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t_d(on)
t_r
t_d(off)
t_f
V_DS = 120 V, R_L = 40 Ω,
I_D = 3 A,
V_GEN = 10 V, R_GEN = 6 Ω
22
25
ns
55
43
Input Capacitance
C_iss
1691
Output Capacitance
C_oss V_DS = 15 V, V_GS = 0 V, f = 1 MHz
117
pF
Reverse Transfer Capacitance
C_rss
65
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
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2
Publication Order Number:
DS_AM14N25-280D_1A