BSS138N Datasheet, PDF (1/5 Pages) Infineon Technologies AG – SIPMOS Small-Signal-Transistor

Analog Power
N-Channel 50-V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize High Cell Density process. Low
r_DS(on) assures minimal power loss and
conserves energy, making this device ideal
for use in power management circuitry.
Typical applications are DC-DC
converters, power management in portable
and battery-powered products such as
computers, printers, PCMCIA cards,
cellular and cordless telephones.
•
Low r_DS(on) Provides Higher Efficiency and
Extends Battery Life
• Miniature SOT-23 Surface Mount Package
Saves Board Space
BSS138N
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
3.5 @ V_GS = 10V
50
6 @ V_GS = 4.5V
10 @ V_GS = 2.75V
I_D (A)
0.26
0.22
0.2
G
D
S
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
Continuous Source Current (Diode Conduction)^a
Power Dissipation^a
Operating Junction and Storage Temperature Range
V_DS
V_GS
T_A=25^oC
T_A=70^oC
I_D
50
V
±20
0.26
0.2
A
I_DM
0.9
I_S
0.2
A
T_A=25^oC
T_A=70^oC
P_D
1.25
W
0.8
T_J, T_stg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Notes
t <= 5 sec
Steady-State
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol
R_{T HJA}
Maximum
100
166
Units
o_C/W
July, 2002 - Rev. A
PRELIMINARY
1
Publication Order Number:
DS-BSS138_E