AMR930N Datasheet, PDF (1/7 Pages) Analog Power – Dual N-Channel 30-V (D-S) MOSFET

Analog Power
AMR930N
Asymmetric Dual N-Channel 30-V (D-S) MOSFET
Key Features:
• Low r_DS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• DC/DC Conversion
VDS (V)
Q1
30
Q2
30
PRODUCT SUMMARY
r_DS(on) (mΩ)
9 @ V_GS = 10V
15 @ V_GS = 4.5V
3.5 @ V_GS = 10V
5.8 @ V_GS = 4.5V
DFN5X6-8L
ID (A)
14
11
22
17
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Q1 Limit Q2 Limit
Drain-Source Voltage
V_DS
30
30
Gate-Source Voltage
V_GS
±20
±20
Continuous Drain Current ^a
Pulsed Drain Current ^b
Continuous Source Current (Diode Conduction) ^a
T_A=25°C
T_A=70°C
I_D
14
11
20
16
I_DM
50
50
I_S
3.3
3.4
Power Dissipation ^a
T_A=25°C
T_A=70°C
P_D
2.5
1.6
2.5
1.6
Operating Junction and Storage Temperature Range
T_J, T_stg
-55 to 150
Units
V
A
A
W
°C
Maximum Junction-to-Ambient ^a
THERMAL RESISTANCE RATINGS
Parameter
t <= 10 sec
Steady State
Symbol
R_θJA
Maximum
50
90
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Preliminary
1
Publication Order Number:
DS_AMR930N_1A