AMD532C Datasheet, PDF (1/3 Pages) Analog Power – P & N-Channel 30-V (D-S) MOSFET

Analog Power
AMD532C
P & N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
V_DS (V)
r_DS(on) m(Ω)
30
95 @ V_GS = 2.5V
59 @ V_GS = 4.5V
-26.5
178 @ V_GS = -2.5V
118 @ V_GS = -4.5V
I_D (A)
20
24
-14
-17
•
Low r_DS(on) provides higher efficiency and
extends battery life
D
S₂
• Low thermal impedance copper leadframe
DPAK saves board space
• Fast switching speed
G₁
G₂
• High performance trench technology
S₁
N-Channel MOSFET
S1 G1 D S2 G1
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parameter
Symbol N-Channel P-Channel
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current^a
T_A=25^oC ^ID
Pulsed Drain Current^b
I_DM
Continuous Source Current (Diode Conduction)^a
I_S
30
-26.5
±12
±12
24
-17
40
-40
30
-30
Power Dissipation^a
T_A=25^oC ^PD
50
50
Operating Junction and Storage Temperature Range
T_J, T_stg
-55 to 175
Units
V
A
A
W
o_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^a
R_θJA
Maximum Junction-to-Case
R_θJC
Maximum
50
3.0
Units
o_C/W
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1
Publication Order Number:
DS-AMD532_D