AMD531C Datasheet, PDF (1/3 Pages) Analog Power – P & N-Channel 30-V (D-S) MOSFET

Analog Power
AMD531C
P & N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low r_DS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
PRODUCT SUMMARY
V_DS (V)
r_DS(on) m(Ω)
30
20 @ V_GS = 4.5V
16 @ V_GS = 10V
-30
33 @ V_GS = -4.5V
23 @ V_GS = -10V
I_D (A)
51
41
-41
-31
•
Low r_DS(on) Provides Higher Efficiency and
Extends Battery Life
• Miniature DPAK Surface Mount Package
Saves Board Space
• High power and current handling capability
• Low side high current DC-DC Converter
applications
D
G₁
S₁
N-Channel MOSFET
S1 G1 D S2 G1
S₂
G₂
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parameter
Symbol N-Channel P-Channel
Drain-Source Voltage
V_DS
30
-30
Gate-Source Voltage
V_GS
Continuous Drain Current^a
T_A=25^oC ^ID
Pulsed Drain Current^b
I_DM
Continuous Source Current (Diode Conduction)^a
I_S
20
-20
51
-41.0
±40
±40
30
-30
Power Dissipation^a
T_A=25^oC ^PD
50
50
Operating Junction and Storage Temperature Range
T_J, T_stg -55 to 175 -55 to 175
Units
V
A
A
W
o_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^a
R_θJA
Maximum Junction-to-Case
R_θJC
Maximum
50
3.0
Units
o_C/W
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
July, 2005 - Rev. A
PRELIMINARY
1
Publication Order Number:
DS-AMD531_B