AMD510C Datasheet, PDF (1/3 Pages) Analog Power – P & N-Channel 100-V (D-S) MOSFET

Analog Power
AMD510C
P & N-Channel 100-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, and cordless telephones.
• Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
DPAK saves board space
• Fast switching speed
• High performance trench technology
PRODUCT SUMMARY
V_DS (V)
r_DS(on) m(Ω)
100
160 @ VGS = 4.5V
140 @ VGS = 10V
-100
290 @ V_GS = -4.5V
270 @ V_GS = -10V
D₁
I_D (A)
15
16
-11
-12
S
2
G
1
S1 G1 D S2 G2
S
1
N-Channel MO SF ET
G
2
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol N-Channel P-Channel Units
Drain-Source Voltage
Gate-Source Voltage
V_DS
100
-100
V
VGS
±20
±20
Continuous Drain Current^a
TA=25^oC
TA=70^oC
I_D
16
-12
30
-32
A
Pulsed Drain Current^b
IDM
40
-40
Continuous Source Current (Diode Conduction)^a
IS
30
-30
A
Power Dissipation^a
TA=25^oC ^PD
50
50
W
Operating Junction and Storage Temperature Range TJ, Tstg
-55 to 175
o_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^a
R_θJA
Maximum Junction-to-Case
R_θJC
Maximum
50
3.0
Units
o_C/W
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1
Publication Order Number:
DS-AMD510C_A