AMCC926NE Datasheet, PDF (1/5 Pages) Analog Power – Dual N-Channel 20-V (D-S) MOSFET

Analog Power
AMCC926NE
Dual N-Channel 20-V (D-S) MOSFET
Key Features:
• Low r_DS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• Power Routing
• Li Ion Battery Packs
• Level Shifting and Driver Circuits
VDS (V)
20
PRODUCT SUMMARY
r_DS(on) (mΩ)
10 @ V_GS = 4.5V
14 @ V_GS = 2.5V
ID (A)
13
11
DFN3x3-8L
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
V_DS
20
Gate-Source Voltage
V_GS
±12
Continuous Drain Current ^a
Pulsed Drain Current ^b
Continuous Source Current (Diode Conduction) ^a
T_A=25°C
T_A=70°C
I_D
13
10
I_DM
50
I_S
7
Power Dissipation ^a
T_A=25°C
T_A=70°C
P_D
2.5
1.5
Operating Junction and Storage Temperature Range
T_J, T_stg -55 to 150
Units
V
A
A
W
°C
Maximum Junction-to-Ambient ^a
THERMAL RESISTANCE RATINGS
Parameter
t <= 10 sec
Steady State
Symbol Maximum
R_θJA
83
120
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS_AMCC926NE_1B