AMCC922NE Datasheet, PDF (1/5 Pages) Analog Power – Dual N-Channel Logical Level MOSFET

Analog Power
AMCC922NE
Dual N-Channel Logical Level MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
• Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
DFN 3x3 saves board space
• Fast switching speed
• High performance trench technology
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (OHM)
20
0.015 @ V_GS = 4.5 V
0.018 @ V_GS = 2.5V
I_D (A)
8.2
7.5
DFN 3x3
Top View
D
D
S1 1
G1 2
S2 3
G2 4
8
D ^G1
G₂
7D
6D
S₁
S₂
5
D ^{N- Ch ann el N-Cha nne l}
MOS FET MOSF ET
ESD Protected
2000V
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
Continuous Source Current (Diode Conduction)^a
Power Dissipation^a
Operating Junction and Storage Temperature Range
VDS
VGS
TA=25^oC
TA=70^oC
ID
20
V
±8
8.2
6.7
A
IDM
±40
IS
1.5
A
TA=25^oC
TA=70^oC
PD
1.5
W
1.0
TJ, Tstg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parame te r
Symbol Typ
Maximum Junction-to-Ambient^a
t <= 10 sec
R_thJA
72
Steady State
100
Max
83
120
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AMCC922NE_B