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AMCC530C Datasheet, PDF (1/7 Pages) Analog Power – N & P-Channel 30-V (D-S) MOSFET
Analog Power
AMCC530C
N & P-Channel 30-V (D-S) MOSFET
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• DC/DC Conversion
• Motor Drives
VDS (V)
30
-30
PRODUCT SUMMARY
rDS(on) (mΩ)
50 @ VGS = 10V
83 @ VGS = 4.5V
72 @ VGS = -10V
105 @ VGS = -4.5V
ID (A)
5.8
4.5
-4.9
-4.0
DFN3x3-8L
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Nch Limit Pch Limit
Drain-Source Voltage
VDS
30
-30
Gate-Source Voltage
VGS
±20
±20
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
TA=25°C
TA=70°C
ID
IDM
IS
5.8
-4.9
4.2
-3.5
30
-30
3.2
-2.8
Power Dissipation a
TA=25°C
TA=70°C
PD
2.5
1.3
2.5
1.3
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
Units
V
A
A
W
°C
Maximum Junction-to-Ambient a
THERMAL RESISTANCE RATINGS
Parameter
t <= 10 sec
Steady State
Symbol
RθJA
Maximum
83
120
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS_AMCC530C_1A