AMCC431P Datasheet, PDF (1/3 Pages) Analog Power – P-Channel 30-V (D-S) MOSFET

Analog Power
P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
• Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
DFN3x3-8PP saves board space
• Fast switching speed
• High performance trench technology
AMCC431P
PRODUCT SUMMARY
V_DS (V)
r_DS(on) m(Ω)
-30
60 @ V_GS = -10V
90 @ V_GS = -4.5V
I_D (A)
-5.9
-4.8
DFN3x3
Top View
S
S
1
S
2
8D
7 D^G
S
3
6D
G
4
5D
D
P-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
Continuous Source Current (Diode Conduction)^a
Power Dissipation^a
Operating Junction and Storage Temperature Range
V_DS
VGS
TA=25^oC
TA=70^oC
I_D
-30
V
±20
-5.9
-4.8
A
I_DM
±50
I_S
-2.1
A
TA=25^oC
TA=70^oC
P_D
3.1
W
2.0
TJ, Tstg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 10 sec
Steady State
Symbol
RθJA
Maximum Units
35
o_C/W
81
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1
Publication Order Number:
DS-AMCC431_A