AMA423P Datasheet, PDF (1/5 Pages) Analog Power – P-Channel 20-V (D-S) MOSFET

Analog Power
P-Channel 20-V (D-S) MOSFET
Key Features:
• Low r_DS(on) trench technology
• Low thermal impedance
• 2mm x 2mm footprint DFN package
• RDS rated at 1.8V Gate-drive
Typical Applications:
• Battery Powered Instruments
• Portable Computing
• Mobile Phones
• GPS Units and Media Players
AMA423P
VDS (V)
-20
PRODUCT SUMMARY
r_DS(on) (mΩ)
42 @ V_GS = -4.5V
57 @ V_GS = -2.5V
86 @ V_GS = -1.8V
ID(A)
-6.6
-5.7
-1
DFN2x2-8
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
V_DS
-20
Gate-Source Voltage
V_GS
±8
Continuous Drain Current ^a
Pulsed Drain Current ^b
Continuous Source Current (Diode Conduction) ^a
T_A=25°C
T_A=70°C
I_D
-6.6
-5.3
I_DM
-20
I_S
4
Power Dissipation ^a
T_A=25°C
T_A=70°C
P_D
3
1.92
Operating Junction and Storage Temperature Range
T_J, T_stg -55 to 150
Units
V
A
A
W
°C
Maximum Junction-to-Ambient ^a
THERMAL RESISTANCE RATINGS
Parameter
t <= 5 sec
Steady State
Symbol
R_θJA
Maximum
40
90
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS-AMA423P-2010-rev4