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AM90N20-140B Datasheet, PDF (1/5 Pages) Analog Power – N-Channel 200-V (D-S) MOSFET
Analog Power
N-Channel 200-V (D-S) MOSFET
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
AM90N20-140B
PRODUCT SUMMARY
VDS (V)
rDS(on) (mΩ)
200
240 @ VGS = 10V
ID (A)
29
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS
200
Gate-Source Voltage
VGS
±20
Continuous Drain Current
Pulsed Drain Current a
TC=25°C
ID
29
IDM
100
Continuous Source Current (Diode Conduction)
TC=25°C
IS
29
Power Dissipation
TC=25°C
PD
300
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units
V
A
A
W
°C
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RθJA
RθJC
Maximum
62.5
0.5
Units
°C/W
Notes
a. Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS_AM90N20-140B_1A