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AM90N06-10P Datasheet, PDF (1/5 Pages) Analog Power – N-Channel 60-V (D-S) MOSFET
Analog Power
N-Channel 60-V (D-S) MOSFET
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• PoE Power Sourcing Equipment
• PoE Powered Devices
• Telecom DC/DC converters
• White LED boost converters
AM90N06-10P
VDS (V)
60
PRODUCT SUMMARY
rDS(on) (mΩ)
9.9 @ VGS = 10V
13 @ VGS = 4.5V
ID(A)
90a
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS
60
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
Power Dissipation a
VGS
±20
TC=25°C
ID
90
IDM
240
IS
90
TC=25°C
PD
120
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
Units
V
A
A
W
°C
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RθJA
RθJC
Maximum
62.5
1.25
Units
°C/W
Notes
a. Package limited
b. Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS_AM90N06-10P_1A