AM90N02-04D Datasheet, PDF (1/2 Pages) Analog Power – N-Channel 20-V (D-S) MOSFET

Analog Power
N-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, and cordless telephones.
• Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
DPAK saves board space
• Fast switching speed
• High performance trench technology
AM90N02-04D
PRODUCT SUMMARY
V_DS (V)
r_DS(on) m(Ω)
20
3.8 @ V_GS = 4.5V
4.6 @ V_GS = 2.5V
I_D (A)
94
86
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Limit Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
Continuous Source Current (Diode Conduction)^a
Power Dissipation^a
Operating Junction and Storage Temperature Range
V_DS
VGS
TC=25^oC ^ID
I_DM
20
V
±8
94
A
120
I_S
30
A
TC=25^oC ^PD
50
W
TJ, Tstg -55 to 175 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^a
R_θJA
Maximum Junction-to-Case
R_θJC
Maximum
50
3.0
Units
o_C/W
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1
Publication Order Number:
DS-AM90N02-04_A