AM80N03-05D Datasheet, PDF (1/3 Pages) Analog Power – N-Channel 30-V (D-S) MOSFET

Analog Power
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers, and
printers.
AM80N03-05D
PRODUCT SUMMARY
V_DS (V)
r_DS(on) m(Ω)
30
4.8 @ V_GS = 10V
7 @ V_GS = 4.5V
I_D (A)
84
70
• Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
DPAK saves board space
• Fast switching speed
• High performance trench technology
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame ter
Symbol Limit Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Power Dissipation^a
Operating Junction and Storage Temperature Range
VDS
30
V
V_GS
±20
TC=25^oC ^ID
84
A
T_C=25^oC ^PD
50
W
TJ, Tstg -55 to 175 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^a
R_θJA
Maximum Junction-to-Case
R_θJC
Maximum
50
3.0
Units
o_C/W
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1
Publication Order Number:
DS-AM80N03-05D_A