AM7930N Datasheet, PDF (1/3 Pages) Analog Power – Dual N-Channel 30-V (D-S) MOSFET

Analog Power
AM7930N
Dual N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
• Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
SOIC-8PP saves board space
• Fast switching speed
• High performance trench technology
PRODUCT SUMMARY
V_DS (V)
r_DS(on) m(Ω)
30
SOIC-8PP
Top View
8 @ VGS = 10V
12 @ VGS = 4.5V
D1
I_D (A)
37
30
D1
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1 ^G1
G₁
6
5
D2
D2
S₁
N-Channel MOSFET
S₁
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Paramete r
Symbol Limit
Units
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
VGS
20
Continuous Drain Current^a
T_A=25^oC
TA=70^oC
ID
37
30
A
Pulsed Drain Current^b
IDM
±50
Continuous Source Current (Diode Conduction)^a
IS
13
A
Power Dissipation^a
T_A=25^oC
TA=70^oC
PD
16
W
10
Operating Junction and Storage Temperature Range T_J, T_stg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 10 sec
Steady State
Symbol
R_θJA
R_θJC
Maximum
35
8
Units
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1
Publication Order Number:
DS-AM7930_A