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AM7924N Datasheet, PDF (1/5 Pages) Analog Power – Dual N-Channel 20-V (D-S) MOSFET
Analog Power
AM7924N
Dual N-Channel 20-V (D-S) MOSFET
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• Power Routing
• Li Ion Battery Packs
• Level Shifting and Driver Circuits
VDS (V)
20
PRODUCT SUMMARY
rDS(on) (mΩ)
7 @ VGS = 4.5V
9 @ VGS = 2.5V
ID (A)
50c
50c
DFN5X6-8L
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS
20
Gate-Source Voltage
Continuous Drain Current
VGS
±12
TA=25°C
TA=70°C
ID
16a
13a
TC=25°C
TC=70°C
ID
50c
50c
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
Power Dissipation
IDM
80
IS
4.3
TA=25°C
2.5a
TA=70°C
TC=25°C
PD
1.6a
36
TC=70°C
23
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units
V
A
W
°C
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS
Parameter
t <= 10 sec
Steady State
Steady State
Symbol
RθJA
RθJC
Maximum
50
70
3.5
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board
b. Pulse width limited by maximum junction temperature
c. Package limited
© Preliminary
1
Publication Order Number:
DS_AM7924N_1B