AM7540C Datasheet, PDF (1/3 Pages) Analog Power – P & N-Channel 40-V (D-S) MOSFET

Analog Power
AM7540C
P & N-Channel 40-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, cellular and cordless telephones.
PRODUCT SUMMARY
V_DS (V)
r_DS(on) m(Ω)
40
46 @ VGS = 4.5V
36 @ VGS = 10V
-40
55 @ V_GS = -4.5V
39 @ V_GS = -10V
I_D (A)
7.2
8.1
-6.6
-7.8
• Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
DFN5x6 saves board space
• Fast switching speed
• High performance trench technology
SOIC-8PP
Top View
D1
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1 ^G1
6 D2
5
D2
S₁
N-Channel MOSFET
S₂
G₂
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol N-Channel P-Channel Units
Drain-Source Voltage
Gate-Source Voltage
V_DS
40
-40
V
VGS
20
-20
Continuous Drain Current^a
TA=25^oC
TA=70^oC
I_D
8.1
-7.8
6.6
-6.4
A
Pulsed Drain Current^b
I_DM
±20
±20
Continuous Source Current (Diode Conduction)^a
I_S
2.9
-2.9
A
Power Dissipation^a
TA=25^oC
TA=70^oC
P_D
3.5
3.5
W
2.2
2.2
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 10 sec
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol
RθJA
Maximum
35
85
Units
o_C/W
o_C/W
PRELIMINARY
1
Publication Order Number:
DS-AM7540_A