AM7530C Datasheet, PDF (1/3 Pages) Analog Power – P & N-Channel 30-V (D-S) MOSFET

Analog Power
AM7530C
P & N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
V_DS (V)
r_DS(on) m(Ω)
30
58 @ VGS = 4.5V
82 @ VGS = 2.5V
-30
112 @ V_GS = -4.5V
172 @ V_GS = -2.5V
I_D (A)
6.4
5.4
-4.6
-3.7
• Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
SOIC-8 saves board space
• Fast switching speed
• High performance trench technology
SOIC-8PP
Top View
D1
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1 ^G1
6 D2
5
D2
S₁
N-Channel MOSFET
S₂
G₂
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol N-Channel P-Channel Units
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
-30
V
VGS
8
-8
Continuous Drain Current^a
TA=25^oC
TA=70^oC
I_D
6.4
-4.6
5.2
-3.8
A
Pulsed Drain Current^b
I_DM
±20
±20
Continuous Source Current (Diode Conduction)^a
I_S
2.9
-2.9
A
Power Dissipation^a
TA=25^oC
TA=70^oC
P_D
3.5
3.5
W
2.2
2.2
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 10 sec
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol
RθJA
Maximum
35
85
Units
o_C/W
o_C/W
PRELIMINARY
1
Publication Order Number:
DS-AM7530_A