AM7496N Datasheet, PDF (1/3 Pages) Analog Power – N-Channel 150-V (D-S) MOSFET

Analog Power
N-Channel 150-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, cellular and cordless telephones.
• Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
SOIC-8PP saves board space
• Fast switching speed
• High performance trench technology
AM7496N
PRODUCT SUMMARY
V_DS (V)
150
r_DS(on) m(Ω)
220 @ V_GS = 10V
230 @ V_GS = 5.5V
SOIC-8PP
Top View
I_D (A)
3.9
3.8
D
S
1
S
2
S
3
G
4
8D
7D
G
6D
S
5 D _{N-Channel MOSFET}
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame ter
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
Continuous Source Current (Diode Conduction)^a
Power Dissipation^a
Operating Junction and Storage Temperature Range
V_DS
V_GS
T_A=25^oC
T_A=70^oC
I_D
150
V
20
3.9
5
A
I_DM
20
I_S
2.3
A
T_A=25^oC
T_A=70^oC
P_D
5.0
W
3.2
T_J, T_stg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 10 sec
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol
R_θJA
Maximum Units
25
o_C/W
65
o_C/W
PRELIMINARY
1
Publication Order Number:
DS-AM7496_A