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AM7001P Datasheet, PDF (1/5 Pages) Analog Power – P-Channel 200-V (D-S) MOSFET | |||
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Analog Power
P-Channel 200-V (D-S) MOSFET
Key Features:
⢠Low rDS(on) trench technology
⢠Low thermal impedance
⢠Fast switching speed
Typical Applications:
⢠PoE Power Sourcing Equipment
⢠PoE Powered Devices
⢠Telecom DC/DC converters
AM7001P
VDS (V)
-200
PRODUCT SUMMARY
rDS(on) (mΩ)
900 @ VGS = -10V
1000 @ VGS = -5.5V
ID(A)
-1.6
-1.5
DFN3x3-8L
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS
-200
Gate-Source Voltage
VGS
±20
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
TA=25°C
TA=70°C
ID
-1.6
-1.2
IDM
-7
IS
-3.8
Power Dissipation a
TA=25°C
TA=70°C
PD
3.5
2
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units
V
A
A
W
°C
Maximum Junction-to-Ambient a
THERMAL RESISTANCE RATINGS
Parameter
t <= 10 sec
Steady State
Symbol
RθJA
Maximum
35
81
Units
°C/W
Notes
a. Surface Mounted on 1â x 1â FR4 Board.
b. Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS_AM7001P_1A
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