AM6968NE Datasheet, PDF (1/5 Pages) Analog Power – Dual N-Channel 20-V (D-S) MOSFET

Analog Power
Dual N-Channel 20-V (D-S) MOSFET
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• Battery Powered Instruments
• Portable Computing
• Mobile Phones
• GPS Units and Media Players
AM6968NE
VDS (V)
20
PRODUCT SUMMARY
r_DS(on) (mΩ)
26 @ V_GS = 4.5V
35 @ V_GS = 2.5V
46 @ V_GS = 1.8V
ID(A)
6.8
5.8
4.7
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
V_DS
20
Gate-Source Voltage
V_GS
±8
Continuous Drain Current ^a
T_A=25°C
T_A=70°C
I_D
6.8
5.5
Pulsed Drain Current ^b
Continuous Source Current (Diode Conduction) ^a
I_DM
30
I_S
2.2
Power Dissipation ^a
T_A=25°C
T_A=70°C
P_D
1.5
1
Operating Junction and Storage Temperature Range
T_J, T_stg -55 to 150
Units
V
A
A
W
°C
Maximum Junction-to-Ambient ^a
THERMAL RESISTANCE RATINGS
Parameter
t <= 10 sec
Steady State
Symbol
R_θJA
Maximum
83
120
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number: DS_AM6968NE_1A