AM6930N Datasheet, PDF (1/5 Pages) Analog Power – Dual N-Channel 30-V (D-S) MOSFET

Analog Power
AM6930N
Dual N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low r_DS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
•
Low r_DS(on) Provides Higher Efficiency and
Extends Battery Life
• Miniature SO-8 Surface Mount Package
Saves Board Space
• High power and current handling capability
• Low side high current DC-DC Converter
applications
PRODUCT SUMMARY
V_DS (V)
r_DS(on) m(Ω)
30
40 @ V_GS = 10V
55 @ V_GS = 4.5V
1
2
3
4
I_D (A)
5.5
4.8
8
7
6
5
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Limit Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
Continuous Source Current (Diode Conduction)^a
Power Dissipation^a
Operating Junction and Storage Temperature Range
V_DS
V_GS
T_A=25^oC
T_A=70^oC
I_D
30
V
± 20
± 5.5
± 20
A
I_DM
± 20
I_S
1.3
A
T_A=25^oC
T_A=70^oC
P_D
2.1
W
1.3
T_J, T_stg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Case^a
Maximum Junction-to-Ambient^a
t <= 5 sec
t <= 5 sec
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol
R_θJC
R_θJA
Maximum
40
60
Units
o_C/W
o_C/W
September, 2003 - Rev. A
PRELIMINARY
1
Publication Order Number:
DS-AM6930_B