AM6923P Datasheet, PDF (1/5 Pages) Analog Power – Dual P-Channel 12-V (D-S) MOSFET

Analog Power
AM6923P
Dual P-Channel 12-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
V_DS (V) r_DS(on) (OHM)
0.022 @ V_GS = -4.5V
-12 0.027 @V_GS= -2.5V
0.032 @ V_GS = -1.8V
I_D (A)
-5.7
-4.9
-4.0
•
Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
TSSOP-8 saves board space
• Fast switching speed
• High performance trench technology
TSSOP-8
Top View
S₁
S₂
D1 1
8 D2
S1 2
7
S2 ^G1
G₂
S1 3
6 S2
G1 4
5 G2
D₁
D₂
P-Channel MOSFET P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
V_DS
V_GS
T_A=25^oC
T_A=70^oC
I_D
I_DM
-12
V
±8
-5.7
-4.7
A
-10
Continuous Source Current (Diode Conduction)^a
I_S
±1.6 ^A
Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A=25^oC
T_A=70^oC
P_D
1.15
W
0.7
T_J, T_stg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Symbol Typ
Maximum Junction-to-Ambient^a
t <= 10 sec
Steady State
R_thJA
93
130
Max
110
150
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM6923_C