AM6920NH Datasheet, PDF (1/3 Pages) Analog Power – Dual N-Channel Logical Level MOSFET

Analog Power
AM6920NH
Dual N-Channel Logical Level MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
• Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe ^D
TSSOP-8 saves board space
S1
S1
• Fast switching speed
G1
• High performance trench technology
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (OHM)
0.022 @ V_GS = 4.5 V
20 0.030 @ V_GS = 2.5V
0.046 @ V_GS = 1.8V
TSSOP-8
Top View
D
I_D (A)
6.8
5.8
4.7
D
1
8
D
2
7 S2
G₁
G₂
3
6 S2
4
5
G2
S₁
S₂
N-Channel MOSFET N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
Continuous Source Current (Diode Conduction)^a
Power Dissipation^a
Operating Junction and Storage Temperature Range
V_DS
V_GS
T_A=25^oC
T_A=70^oC
I_D
20
V
±8
6.8
5.4
A
I_DM
±30
I_S
1.5
A
T_A=25^oC
T_A=70^oC
P_D
1.2
W
0.8
T_J, T_stg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parame te r
Maximum Junction-to-Ambient^a
t <= 10 sec
Steady State
Symbol
R_thJA
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
1
PRELIMINARY
Typ
Max
72
83
o_C/W
100
120
Publication Order Number:
DS-AM6920NH_A