AM6544C Datasheet, PDF (1/3 Pages) Analog Power – P & N-Channel 20-V (D-S) MOSFET

Analog Power
AM6544C
P & N-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
V_DS (V)
r_DS(on) m(Ω)
30
32 @ V_GS = 10V
46 @ V_GS = 4.5V
-30
52 @ V_GS = -10V
80 @ V_GS = -4.5V
I_D (A)
4.3
3.7
-3.8
-2.8
•
Low r_DS(on) provides higher efficiency and
extends battery life
TSSOP-8
Top View
D₁
S₂
•
Low thermal impedance copper leadframe ^{D1 1}
S1 2
TSSOP-8 saves board space
S1 3
• Fast switching speed
G1 4
8 D2
G₂
7 S2
G₁
6 S2
5
G2
S₁
D₂
N-Channel MOSFET P-Channel MOSFET
• High performance trench technology
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parameter
Symbol N-Channel P-Channel
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current^a
T_A=25^oC
T_A=70^oC
I_D
Pulsed Drain Current^b
I_DM
Continuous Source Current (Diode Conduction)^a
I_S
Power Dissipation^a
T_A=25^oC
T_A=70^oC
P_D
30
-30
±20
±20
4.3
-3.8
3.5
-3.0
20
-20
1.0
-1.0
1.14
1.14
0.73
0.73
Operating Junction and Storage Temperature Range
T_J, T_stg -55 to 150 -55 to 150
Units
V
A
A
W
o_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Typ
Maximum Junction-to-Ambient^a
t <= 10 sec
Steady State
R_thJA
88
120
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Max
110
150
o_C/W
PRELIMINARY
1
Publication Order Number:
DS-AM6544_A