AM6411P Datasheet, PDF (1/5 Pages) Analog Power – P-Channel 20-V (D-S) MOSFET

Analog Power
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
AM6411P
PRODUCT SUMMARY
V_DS (V)
r_DS(on) m(Ω)
13 @ V_GS = -4.5V
-20
19 @ V_GS = -2.5V
35 @ V_GS = -1.8V
TSSOP-8
Top View
I_D (A)
-9.5
-7.9
-5.8
S
•
Low r_DS(on) provides higher efficiency and
extends battery life
D
S
1
2
• Low thermal impedance copper leadframe ^S
3
TSSOP-8 saves board space
G
4
• Fast switching speed
• High performance trench technology
8
D
G
7
S
6
S
5
D
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum
Drain-Source Voltage
V_DS
-20
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
Continuous Source Current (Diode Conduction)^a
V_GS
±12
T_A=25^oC
T_A=70^oC
I_D
-9.5
-7.7
I_DM
-30
I_S
-1.5
Power Dissipation^a
T_A=25^oC
T_A=70^oC
P_D
1.8
1.2
Operating Junction and Storage Temperature Range
T_J, T_stg -55 to 150
Units
V
A
A
W
o_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 10 sec
Steady State
Symbol
R_θJA
Maximum
70
115
Units
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1
Publication Order Number:
DS-AM6411_D