AM5931P Datasheet, PDF (1/3 Pages) Analog Power – P-Channel 30-V (D-S) MOSFET

Analog Power
P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
• Low r_DS(on) provides higher efficiency and
extends battery life
•
Low thermal impedance copper leadframe
S1
G1
CF1206-8 saves board space
S2
• Fast switching speed
G2
• High performance trench technology
AM5931P
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (OHM)
-30 ^{0.084 @ VGS = -10V}
0.130 @ V_GS = -4.5V
I_D (A)
-3.1
-2.5
CF1206-8
Top View
1
8
2
7
3
6
4
5
S₁
D_{1 G1}
D₁
D₂
D₂
P-C
D₁
hannel M
OSF
ET
S₂
G₂
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
Continuous Source Current (Diode Conduction)^a
Power Dissipation^a
Operating Junction and Storage Temperature Range
V_DS
VGS
TA=25^oC
TA=70^oC
I_D
-30
V
±20
-3.1
-2.5
A
I_DM
-10
I_S
±1.6
A
TA=25^oC
TA=70^oC
P_D
1.15
W
0.7
TJ, Tstg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Symbol Typ
Maximum Junction-to-Ambient^a
t <= 10 sec
Steady State
R_thJA
93
130
Max
110
150
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM5931_A