AM5829P Datasheet, PDF (1/5 Pages) Analog Power – P-Channel 20-V (D-S) MOSFET With Schottky Diode

Analog Power
AM5829P
P-Channel 20-V (D-S) MOSFET With Schottky Diode
These miniature surface mount MOSFETs utilize a
MOSFET PRODUCT SUMMARY
high cell density trench process to provide low
V_DS (V)
r_DS(on) (OHM)
I_D (A)
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
-20
0.110 @V_GS = -4.5V ±3.6
0.160 @V_GS = -2.5V ±3.0
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
SCHOTTKY PRODUCT SUMMARY
V_KA (V)
V_f (V)
Diode Forward Voltage
I_F (A)
•
Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
CF1206-8 saves board space
20
0.48V @ 1.0A
1.0
CF1206-8
Top View
S
K
A1
8K
A
2
7
K^G
• Fast switching speed
• High performance trench technology
S3
G4
6D
5D
D
A
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum Units
Drain-Source Voltage (MOSFET)
V_DS
-20
Reverse Voltage (Schottky)
V_KA
20
V
Gate-Source Voltage (MOSFET)
V_GS
±8
Continuous Drain Current (T_J=150^oC) (MOSFET)^a
T_A=25^oC
T_A=70^oC
I_D
±2.5
±1.9
Pulsed Drain Current (MOSFET)^b
Continuous Source Current (MOSFET Diode Conduction)^a
I_DM
±10
A
I_S
-1.6
Average Forward Current (Schottky)
I_F
0.5
Pulsed Forward Current (Schottky)
I_FM
8
Maximum Power Dissipation (MOSFET)^a
Maximum Power Dissipation (Schottky)^a
Operating Junction and Storage Temperature Range
T_A=25^oC
2.1
T_A=70^oC
T_A=25^oC
P_D
1.1
W
1.3
T_A=70^oC
0.68
T_J, T_stg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^a
Notes
t <= 5 sec
Steady State
R_thJA
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Typ
50
90
Max
60
110
o_C/W
PRELIMINARY
1
Publication Order Number:
DS-AM5829_A