AM5521C Datasheet, PDF (1/3 Pages) Analog Power – N & P-Channel 20-V (D-S) MOSFET

Analog Power
AM5521C
N & P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low r_DS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and
power management in portable and
battery-powered products such as
computers, printers, PCMCIA cards,
cellular and cordless telephones.
S1
•
Low r_DS(on) provides higher efficiency and
G1
extends battery life
S2
•
Low thermal impedance copper leadframe
G2
DFN2X3 saves board space
• Fast switching speed
• High performance trench technology
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
20
0.058 @ V_GS = 4.5V
0.077 @ V_GS = 2.5V
-20
0.064 @ V_GS = -4.5V
0.085 @ V_GS = -2.5V
I_D (A)
5
4.3
-4.7
-4.1
DFN2x3
Top View
D₁
S₂
1
2
8
7
D₁
D₁
G₁
G₂
3
4
6
5
D₂
D₂
S₁
D₂
N-Channel MOSFET P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol N-Channel P-Channel Units
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
-20
V
VGS
±8
±8
Continuous Drain Current^a
T_A=25^oC
TA=70^oC
ID
5
-4.7
4.1
-3.9
A
Pulsed Drain Current^b
IDM
8
-8
Continuous Source Current (Diode Conduction)^a
IS
4.5
-4.5
A
Power Dissipation^a
T_A=25^oC
TA=70^oC
PD
2.1
W
1.3
Operating Junction and Storage Temperature Range T_J, T_stg
-55 to 150
o_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 10 sec
Steady State
Symbol
R_θJA
Maximum
62.5
80
Units
o_C/W
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM5521C_A