AM5460N Datasheet, PDF (1/5 Pages) Analog Power – N-Channel 60-V (D-S) MOSFET

Analog Power
AM5460N
N-Channel 60-V (D-S) MOSFET
Key Features:
• Low r_DS(on) trench technology
• Low thermal impedance
• Fast switching speed
• Small Footprint DFN3x2-8L package
Typical Applications:
• Telecom DC/DC converters
• White LED boost converters
• Industrial DC/DC conversion
• Automotive Entertainment and GPS
DC/DC conversion
VDS (V)
60
PRODUCT SUMMARY
r_DS(on) (mΩ)
82 @ V_GS = 10V
115 @ V_GS = 4.5V
ID(A)
5
4.1
DFN3x2-8L EP
DDD
D
G
S
SS
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
V_DS
60
Gate-Source Voltage
V_GS
±20
Continuous Drain Current ^a
Pulsed Drain Current ^b
Continuous Source Current (Diode Conduction) ^a
T_A=25°C
T_A=70°C
I_D
5
3.7
I_DM
30
I_S
4.3
Power Dissipation ^a
T_A=25°C
T_A=70°C
P_D
3.5
2
Operating Junction and Storage Temperature Range
T_J, T_stg -55 to 150
Units
V
A
A
W
°C
Maximum Junction-to-Ambient ^a
THERMAL RESISTANCE RATINGS
Parameter
t <= 10 sec
Steady State
Symbol
R_θJA
Maximum
35
81
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS-AM5460N